參數(shù)資料
型號: NE5520279A
廠商: NEC Corp.
英文描述: NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
中文描述: 鄰舍3.2五,2瓦報(bào)
文件頁數(shù): 6/7頁
文件大?。?/td> 166K
代理商: NE5520279A
NE5520279A
TYPICAL APPLICATION CIRCUIT PER FOR MANCE
(T
A
= 25°C)
O
O
OUTPUT POWER vs.
INPUT POWER
Input Power, P
IN
(dBm)
IM3 vs.
OUTPUT POWER
Output Power, P
OUT
(dBm), Each Tone
I
13
20
22
24
26
30
28
32
34
36
14
15 16
17 18
19 20 21 22 23 24 25 26 27
3.6 V, 300 mA
3.6 V, 500 mA
6.0 V, 300 mA
6.0 V, 500 mA
f= 2.44 GHz
12
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-20.0
-20.0
14
16
18
20
22
24
26
28
30
3.6 V, 300 mA
3.6 V, 500 mA
6.0 V, 300 mA
6.0 V, 300 mA
f= 2.44 GHz
相關(guān)PDF資料
PDF描述
NE5520279A-T1 NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5532AI DUAL LOW-NOISE OPERATIONAL AMPLIFIERS
NE5532I DUAL LOW-NOISE OPERATIONAL AMPLIFIERS
NE5532 Dual Operational Amplifier
NE5532D Dual Operational Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE5520279A-A 功能描述:射頻MOSFET電源晶體管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
NE5520279A-EVPW04 功能描述:射頻開發(fā)工具 Silicon Medium Pwr LDMOS RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
NE5520279A-EVPW09 功能描述:射頻開發(fā)工具 For NE5520279A-A Power at 900 MHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
NE5520279A-EVPW24 功能描述:射頻開發(fā)工具 For NE5520279A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
NE5520279A-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R