參數(shù)資料
型號(hào): NE25139
廠商: NEC Corp.
英文描述: GENERAL PURPOSE DUAL-GATE GaAS MESFET
中文描述: 一般用途的雙柵GaAs MESFET
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 54K
代理商: NE25139
NE25139
MODEL RANGE
Frequency:
Bias:
0.1 to 4 GHz
V
DS
= 5 V, Vg
1
s= -0.785 V, Vg
2
s= 0 V, I
D
= 10 mA
SCHEMATIC
P1
port = 3
Pgate1
port = 1
C12
C = 0.32
Cg1s
C = 0.41
P4
port = 4
Pdrain
port = 2
Cg1d
C = 5.64e-03
Ls
L = 1.78
Rd
R = 4.58
RDS
R = 711
R12
R = 1.13
Rs
R = 5.79
Lg2
L = 0.40
Lg1
L = 1.65
Rg1
R = 1.52
Cg2s
C = 0.39
CDS
C = 7.60e-02
Rg2
R = 1.44
Cg2d
C = 0.15
CAP
CAP
CAP
CAP
CAP
CAP
RES
RES
RES
RES
RES
RES
IND
IND
IND
PORT
PORT
PORT
PORT
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
NONLINEAR MODEL
相關(guān)PDF資料
PDF描述
NE25139-T1 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U71 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U72 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U73 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U74 GENERAL PURPOSE DUAL-GATE GaAS MESFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE25139-T1 功能描述:MOSFET SOT-143 DL GT MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE25139T1U71 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U72 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139-T1-U72 功能描述:MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE25139T1U73 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET