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參數(shù)資料
| 型號： | NE25139 |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| 中文描述： | 一般用途的雙柵GaAs MESFET |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 54K |
| 代理商： | NE25139 |
I
I
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
Drain Current, I
D
(mA)
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
2.0
1.0
-1.0
0 +1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
V
DS
= 5 V
f = 1kHz
1
1
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
NE25139
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
P
P
N
N
P
P
30
15
0
-15
-30
-45
-3.0 -2.0 -1.0 0 +1.0 +2.0
0
5
10
G
PS
NF
V
DS
= 5 V
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
1
25
20
15
10
5
0
0 5 10
0
5
V
DS
= 5 V
V
= 1 V
f = 900 MHz
G
PS
NF
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE25139-T1 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U71 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U72 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U73 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U74 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE25139-T1 | 功能描述:MOSFET SOT-143 DL GT MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE25139T1U71 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U72 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139-T1-U72 | 功能描述:MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE25139T1U73 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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