參數(shù)資料
型號(hào)： NDS9435A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Single P-Channel Enhancement Mode Field Effect Transistor
中文描述： 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 219K
代理商： NDS9435A
NDS9435A Rev B
-20
-15
-10
-5
0
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -15V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 16. Maximum Safe Operating Area
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
o
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
o
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
1s
10s
DC
100ms
10ms
RDS(ON) LIMIT
1ms
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
100us
Figure 14. SO-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料
PDF描述
NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor（4.5A，20V，0.06Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4.5A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9435A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8
NDS9435A_02 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET
NDS9435A_D84Z 功能描述:MOSFET P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9435A_Q 功能描述:MOSFET -30V -5.3A P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9925A 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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