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參數(shù)資料
| 型號(hào)： | NDS9933 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.2 A, 20 V, 0.11 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 191K |
| 代理商： | NDS9933 |
N
NDS9933A Rev. A
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild’s propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
January 1999
Features
-2.8 A, -20 V. R
DS(on)
= 0.14
@ V
GS
= -4.5 V
R
DS(on)
= 0.19
@ V
GS
= -2.7 V
R
DS(on)
= 0.20
@ V
GS
= -2.5 V.
High density cell design for extremely low R
DS(on)
.
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
NDS9933A
-20
±
8
-2.8
-10
2
1.6
1
0.9
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
NDS9933A
Device
NDS9933A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
1
5
7
8
2
3
4
6
SO-8
D1
D1
D2
D2
S1
G1S2
G1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS9933A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS9936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9945 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9947 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS9948 | Dual P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9933A | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9933A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9936 | 功能描述:MOSFET Dl N-Ch Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9943 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9945 | 功能描述:MOSFET Dl N-Ch Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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