參數(shù)資料
型號： NDS9435A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Single P-Channel Enhancement Mode Field Effect Transistor
中文描述： 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 3/10頁
文件大?。?/td> 219K
代理商： NDS9435A
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
-1.9
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -5.3 A
(Note 2)
V
GS
= 0V, I
F
= -5.3 A, dI
F
/dt = 100 A/μs
0.85
-1.3
V
Reverse Recovery Time
100
ns
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
@
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz cpper.
c. 125
o
C/W when mounted on a 0.006 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9435A Rev B
1a
1b
1c
相關(guān)PDF資料
PDF描述
NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor（4.5A，20V，0.06Ω）(雙N溝道增強型場效應(yīng)管（漏電流4.5A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9435A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8
NDS9435A_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET
NDS9435A_D84Z 功能描述:MOSFET P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9435A_Q 功能描述:MOSFET -30V -5.3A P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9925A 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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