參數(shù)資料
型號(hào)： NDS8434
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Single P-Channel Enhancement Mode Field Effect Transistor
中文描述： 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 330K
代理商： NDS8434
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
-0.7
-1
V
T
J
= 125
o
C
-0.3
-0.45
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -6.5 A
0.026
0.035
T
J
= 125
o
C
0.037
0.07
V
GS
= -2.7 V, I
D
= -5.5 A
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -6.5 A
0.036
0.05
I
D(on)
On-State Drain Current
-15
A
-10
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
18
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
2330
pF
Output Capacitance
1070
pF
Reverse Transfer Capacitance
360
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
20
40
ns
Turn - On Rise Time
38
80
ns
Turn - Off Delay Time
169
300
ns
Turn - Off Fall Time
63
120
ns
Total Gate Charge
V
= -5 V,
I
D
= -6.5 A, V
GS
= -4.5 V
40
80
nC
Gate-Source Charge
5.3
nC
Gate-Drain Charge
11
nC
NDS8434 Rev. A3
相關(guān)PDF資料
PDF描述
NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor
NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor
NDS8839H Complementary MOSFET Half Bridge
NDS8852H Complementary MOSFET Half Bridge
NDS8858H Complementry MOSFET Half Bridge
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8434_Q 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8434A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
NDS8434A_NL 功能描述:MOSFET 20V P-CH. FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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