參數(shù)資料
型號(hào)： NDS0605
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，5Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻5Ω）)
中文描述： 180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 62K
代理商： NDS0605
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -10 μA
V
DS
= -48 V, V
GS
= 0 V
-60
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 125°C
-500
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-3
V
T
J
= 125°C
-0.6
-2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.5 A
5
T
J
= 125°C
10
V
GS
= -4.5 V, I
D
= -0.25 A
7.5
T
J
= 125°C
15
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -10 V
V
GS
= -4.5 V, V
DS
= -10 V
V
DS
= -10 V, I
D
= -0.2 A
-0.6
A
-0.25
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Forward Transconductance
0.07
S
V
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
60
pF
Output Capacitance
25
pF
5
pF
t
D(on)
Turn - On Delay Time
V
DD
= -30 V, I
D
= -0.2 A,
V
GS
= -10 V, R
GEN
= 25
10
nS
t
r
t
D(off)
Turn - On Rise Time
15
nS
Turn - Off Delay Time
15
nS
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
20
nS
I
S
I
SM
V
SD
Continuous Source Diode Current
-0.18
A
Maximum Pulsed Source Diode Current
(Note 1)
-1
A
Drain-Source Diode Forward Voltage
V
= 0 V, I
S
= -0.5 A
(Note 1)
-1.5
V
T
J
= 125°C
-1.3
Note :
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
NDS0605.SAM
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS0605 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0605_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0605_Q 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0605-MR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET NDS0605 MINIREEL 500PCS
NDS0610 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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