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參數(shù)資料
| 型號(hào)： | NDS331 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | NDS331 |
July 1996
NDS331N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDS331N
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
I
D
Gate-Source Voltage - Continuous
8
V
Maximum Drain Current - Continuous
(Note 1a)
1.3
A
- Pulsed
10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
NDS331N Rev.E
1.3 A, 20 V. R
DS(ON)
= 0.21
@ V
GS
= 2.7 V
R
DS(ON)
= 0.16
@ V
GS
= 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOT
-3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very
small outline surface mount package.
D
S
G
1997 Fairchild Semiconductor Corporation
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| NDS331N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| NDS335 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS335N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS331N | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 20V 1.3A SUPER SOT |
| NDS331N_D87Z | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Sereis N-Channel 20 V 0.16O Enhancement Mode Field Effect Transistor SSOT-3 |
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