- 您現在的位置：買賣IC網 > PDF目錄363243 > NDS331 (Fairchild Semiconductor Corporation) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | NDS331 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | NDS331 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
Maximum Pulsed Drain-Source Diode Forward Current
10
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.8
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Scale 1 : 1 on letter size paper
NDS331N Rev.E
1a
1b
相關PDF資料 |
PDF描述 |
|---|---|
| NDS331N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS332 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS332P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS335 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS335N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NDS331N | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 20V 1.3A SUPER SOT |
| NDS331N_D87Z | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS331N-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Sereis N-Channel 20 V 0.16O Enhancement Mode Field Effect Transistor SSOT-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復。