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參數(shù)資料
| 型號： | NDS0605 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，5Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻5Ω）) |
| 中文描述： | 180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 62K |
| 代理商： | NDS0605 |
April 1995
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol Parameter
T
A
= 25°C unless otherwise noted
NDS0605
Units
V
DSS
V
DGR
Drain-Source Voltage
-60
V
Drain-Gate Voltage (R
GS
< 1 M
)
-60
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current - Continuous
-0.18
A
- Pulsed
-1
P
D
Maximum Power Dissipation T
A
= 25
°
C
Derate above 25
°
C
0.36
W
2.9
mW/
o
C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
T
L
Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
°C/W
NDS0605.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 0.18A DC and can deliver pulsed currents up to 1A. This
product is particularly suited to low voltage applications
requiring a low current high side switch.
-0.18A, -60V. R
DS(ON)
= 5
@ V
GS
= -10V.
Voltage controlled p-channel small signal switch.
High density cell design for low R
DS(ON)
.
High saturation current
.
D
S
G
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS0605 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS0605_D87Z | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS0605_Q | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS0605-MR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET NDS0605 MINIREEL 500PCS |
| NDS0610 | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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