參數(shù)資料
型號： NDB710BE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 40 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 6/6頁
文件大小： 74K
代理商： NDB710BE
NDP710.SAM
0
10
20
I , DRAIN CURRENT (A)
30
40
50
60
0
10
20
30
40
50
g
TJ
25°C
F
125°C
V = 10V
t
p
t
p
V = 10V
L
+
-
V
DD
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
p
1
2
3
5
10
20
50
100
150
0.5
1
2
5
10
50
100
300
V , DRAIN-SOURCE VOLTAGE (V))
I
D
V = 20V
SINGLE PULSE
T = 25°C
RDS(ON) Limit
100μs
1ms
10ms
100ms
10μs
Figure 13. Transconductance Variation
with Drain Current and Temperature
.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
Figure 15. Maximum Safe Operating Area.
Figure 16. Transient Thermal Response Curve.
Typical Electrical Characteristics
(continued)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
t ,TIME (ms)
5
10
20
50
100
200
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 1.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
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