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參數(shù)資料
| 型號： | NDB510AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 15 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | NDB510AE |
NDP510.SAM
0
4
8
12
16
20
0
3
6
9
12
15
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 10V
125°C
t
p
t
p
V = 10V
L
+
-
V
DD
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
p
Figure 13. Transconductance Variation
with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms
.
Figure 15. Maximum Safe Operating Area.
Figure 16. Transient Thermal Response Curve.
Typical Electrical Characteristics
(continued)
0.01
0.1
1
10
100
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 2.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
1
2
3
5
10
20
50
100
150
0.5
1
2
5
10
20
50
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 20V
SINGLE PULSE
T = 25°C
RDS(ON) Limit
100μs
1ms
10ms
DC
10μs
相關PDF資料 |
PDF描述 |
|---|---|
| NDB510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510BE | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDB510B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P_Q | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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