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參數(shù)資料
| 型號(hào)： | NDB510AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 15 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 72K |
| 代理商： | NDB510AE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 15 A
NDP510AE
NDP510BE
NDB510AE
NDB510BE
65
mJ
15
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 100 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
nA
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
3
4
V
V
T
J
= 125°C
1.4
2.3
3.6
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 7.5 A
NDP510A
NDP510AE
NDB510A
NDB510AE
0.088
0.12
T
J
= 125°C
0.16
0.24
V
GS
= 10 V,
I
D
= 6.5 A
NDP510B
NDP510BE
NDB510B
NDB510BE
NDP510A
NDP510AE
NDB510A
NDB510AE
NDP510B
NDP510BE
NDB510B
NDB510BE
ALL
0.15
T
J
= 125°C
0.3
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
15
13
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 7.5 A
6
8.6
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
740
900
pF
ALL
160
180
pF
ALL
40
50
pF
NDP510.SAM
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PDF描述 |
|---|---|
| NDB510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510BE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB510B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P_Q | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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