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參數(shù)資料
| 型號： | NDP510AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 15 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | NDP510AE |
May 1994
NDP510A / NDP510AE / NDP510B / NDP510BE
NDB510A / NDB510AE / NDB510B / NDB510BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
NDP510A NDP510AE
NDB510A NDB510AE
Symbol Parameter
NDP510B NDP510BE
NDB510B NDB510BE
Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage
100
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
100
V
±20
V
- Nonrepetitive (t
P
< 50
μ
s)
Drain Current - Continuous
±40
V
I
D
15
13
A
- Pulsed
60
52
A
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
75
W
0.5
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
°C
NDP510.SAM
15 and 13A, 100V. R
DS(ON)
= 0.12 and 0.15
.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in2) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
D
G
S
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDP510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020P | P-Channel Enhancement Mode Field Effect Transistor（-24A,-20V，0.05Ω）(P溝道增強型MOS場效應管（漏電流-24A, 漏源電壓-20V，導通電阻0.05Ω）) |
| NDP6020P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB6020 | N-Channel Enhancement Mode Field Effect Transistor（35A,20V，0.023Ω）(N溝道增強型MOS場效應管（漏電流35A, 漏源電壓20V，導通電阻0.023Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDP510B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP510BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP51957-13B | 制造商:MS# - MILITARY 功能描述: |
| NDP6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP6020P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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