- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363238 > NDB510AE (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | NDB510AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 15 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | NDB510AE |
NDP510.SAM
0
2
V , DRAIN-SOURCE VOLTAGE (V)
4
6
8
0
10
20
30
40
I
D
10
8.0
7.0
6.0
5.0
V = 20V
GS
12
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
T , JUNCTION TEMPERATURE (°C)
D
V = 10V
GS
I = 7.5A
R
D
-50
-25
0
25
50
75
100
125
150
175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
G
I = 250μA
V = V
GS
V
t
0
10
20
30
40
0.8
1.2
1.6
2
I , DRAIN CURRENT (A)
D
V = 5V
R
D
7.0
20
10
12
8.0
6.0
0
5
10
15
I , DRAIN CURRENT (A)
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
D
J
25°C
-55°C
V = 10V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
8
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I
25
125
V = 10V
D
TJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510BE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB510B | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P_Q | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。