參數(shù)資料
型號: NCN6004AFTBR2
廠商: ON SEMICONDUCTOR
元件分類: 其它接口
英文描述: Dual SAM/SIM Interface Integrated Circuit
中文描述: SPECIALTY INTERFACE CIRCUIT, PQFP48
封裝: PLASTIC, TQFP-48
文件頁數(shù): 25/40頁
文件大?。?/td> 329K
代理商: NCN6004AFTBR2
NCN6004A
http://onsemi.com
25
Figure 17. Typical CRD_VCC Ripple Voltage
NOTE:
Operating conditions under full output load.
Figure 18. Typical Card Voltage Turn ON and Start-up
Sequence
Figure 19. Typical Card Supply Turn OFF
58
60
62
64
66
68
70
72
74
2.5
3.0
3.5
4.0
V
bat
(V)
4.5
5.0
5.5
Figure 20. CRD_VCC Efficiency as a Function of the
Input Supply Voltage
E
V
out
= 1.8 V
V
out
= 5.0 V
V
out
= 3.0 V
L
out
= 22 H
ESR = 2
The curves in Figure 20, illustrate the typical behavior
under full output current load (35 mA, 60 mA and 65 mA),
according to EMV specifications.
During the operation, the inductor is subject to high peak
current as depicted in Figure 21 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
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