- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361089 > NCN6000 (ON SEMICONDUCTOR) Compact Smart Card Interface IC(智能卡接口集成電路) PDF資料下載
參數(shù)資料
| 型號(hào)： | NCN6000 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Compact Smart Card Interface IC(智能卡接口集成電路) |
| 中文描述： | 緊湊型智能卡接口IC（智能卡接口集成電路） |
| 文件頁數(shù)： | 22/36頁 |
| 文件大?。?/td> | 358K |
| 代理商： | NCN6000 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁當(dāng)前第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
NCN6000
http://onsemi.com
22
Vbat Supply Voltage Monitoring
The builtin comparator, associated with the band gap
reference, continuously monitors the +Vbat input. During
the start up, all the NCN6000 functions are deactivated and
no data transfer can take place. When the +Vbat voltage rises
above 2.35 V (typical), the chip is activated and all the
functions becomes available. The typical behavior is
provided here after Figure 16. At this point, the internal
Power On Reset signal is activated (not accessible
externally) and all the logic signals are forced into the states
as defined by Table 3.
If the +Vbat voltage drops below 2.25 V (typical) during
the operation, the NCN6000 generate a Power Down
sequence and is forced in a no operation mode. The builtin
100 mV (typical) hysteresis avoids unstable operation when
the battery voltage slowly varies around the 2.30 V.
On the other hand, the microcontroller can read the
STATUS signal, pin 5, to control the state of the battery prior
to launch either a NCN6000 programming or an ATR
sequence (Table 4).
2.80 V
2.35 V
2.25 V
Figure 16. Typical Vbat Monitoring
Vbat
3.30 V
Vbat_OK
Vbat STATUS
Note: Drawing is not to scale and voltages are typical.
See specifications data for details.
DCDC Converter Operation
The builtin DCDC converter is based on a modified
boost structure to cover the full battery and card operating
voltage range. The builtin battery voltage monitor provides
an automatic system to accommodate the mode of operation
whatever be the Vbat and CRD_VCC voltages. Comparator
U3/Figure 17 tracks the two voltages and set up the
operating mode accordingly.
U2
+
U3
V
ref
+
MOS Drive
Substrat Bias
U1
PWR_ON
3 V/ 5 V
Overload
VCC_OK
R1
1R
Current Sense
20
19
18
15
17
V
bat
V
bat
L2
22 H
L
out_L
L
out_H
+
GND
CRD_VCC
C1
GND
GND
GND
V
out
_3_5
V
ref
_3/5 V
Voltage Regulation
V
bat
Q3
Q1
Q2
GND
V
bat
V
bat
/V
CC
Comparator
NMOS Gate Drive
PMOS Gate Drive
L
GND
PWR_GND
GND
Figure 17. Basic DCDC Structure
+
R2
R3
R4
Active Pull Down
GND
Q4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCN6001DTBR2 | Compact Smart Card Interface IC |
| NCN6001 | Compact Smart Card Interface IC |
| NCN6004AFTBR2 | Dual SAM/SIM Interface Integrated Circuit |
| NCN6004A | Dual SAM/SIM Interface Integrated Circuit |
| NCN6010DTBR2 | SIM Card Supply and Level Shifter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Compact Smart Card Interface IC |
| NCN6000DTB | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| NCN6000DTBG | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart Card Interface RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| NCN6000DTBR2 | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| NCN6000DTBR2G | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart Card Interface RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。