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參數(shù)資料
| 型號： | MX29LV320AB |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 32兆位[4米× 8 / 2米× 16]單電壓3V時僅閃存 |
| 文件頁數(shù)： | 2/60頁 |
| 文件大?。?/td> | 619K |
| 代理商： | MX29LV320AB |
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2
P/N:PM1008
REV. 1.1, MAY 28, 2004
MX29LV320AT/B
AUTOMATIC PROGRAMMING
The MX29LV320AT/B is byte/word programmable using
the Automatic Programming algorithm. The Automatic
Programming algorithm makes the external system do
not need to have time out sequence nor to verify the
data programmed. The typical chip programming time at
room temperature of the MX29LV320AT/B is less than
36 seconds.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to DATA polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 35 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29LV320AT/B is sector(s) erasable using
MXIC's Auto Sector Erase algorithm. Sector erase
modes allow sectors of the array to be erased in one
erase cycle. The Automatic Sector Erase algorithm
automatically programs the specified sector(s) prior to
electrical erase. The timing and verification of
electrical erase are controlled internally within the
device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stand-
ard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, relia-
bility, and cost effectiveness. The MX29LV320AT/B elec-
trically erases all bits simultaneously using Fowler-Nord-
heim tunneling. The bytes/words are programmed by
using the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
The MX29LV320AT/B uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and
auto Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamperes on address and data pin from -1V to
VCC + 1V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV320ABTC-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-70G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTI-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV320CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:NOR Flash, 2M x 16, 40 Pin, Plastic, TSSOP |
| MX29LV320CBTI-90G | 制造商:MACRONIX 功能描述: |
| MX29LV320DBXEI-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 32 Mb (4 M x 8) 70 ns Parallel Flash-LFBGA-48 |
| MX29LV320DTTI-70G | 制造商:Macronix International Co Ltd 功能描述:2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MX29LV320EBTI-70G | 功能描述:IC FLASH PAR 3V 32MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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