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參數(shù)資料
| 型號(hào)： | MX29LV320AB |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 32兆位[4米× 8 / 2米× 16]單電壓3V時(shí)僅閃存 |
| 文件頁數(shù)： | 15/60頁 |
| 文件大?。?/td> | 619K |
| 代理商： | MX29LV320AB |
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15
P/N:PM1008
REV. 1.1, MAY 28, 2004
MX29LV320AT/B
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns (typical) on OE, CE or WE
will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE =
VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
POWER-UP SEQUENCE
The MX29LV320AT/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
POWER-UP WRITE INHIBIT
If WE=CE=VIL and OE=VIH during power up, the device
does not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the
read mode on power-up.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected be-
tween its VCC and GND.
SOFTWARE COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 3 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress. Either of the two
reset command sequences will reset the device (when
applicable).
All addresses are latched on the falling edge of WE or
CE, whichever happens later. All data are latched on ris-
ing edge of WE or CE, whichever happens first.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV320ABTC-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-70G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTI-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV320CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:NOR Flash, 2M x 16, 40 Pin, Plastic, TSSOP |
| MX29LV320CBTI-90G | 制造商:MACRONIX 功能描述: |
| MX29LV320DBXEI-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 32 Mb (4 M x 8) 70 ns Parallel Flash-LFBGA-48 |
| MX29LV320DTTI-70G | 制造商:Macronix International Co Ltd 功能描述:2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MX29LV320EBTI-70G | 功能描述:IC FLASH PAR 3V 32MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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