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參數(shù)資料
| 型號(hào)： | MX29LV320AB |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 32兆位[4米× 8 / 2米× 16]單電壓3V時(shí)僅閃存 |
| 文件頁數(shù)： | 19/60頁 |
| 文件大?。?/td> | 619K |
| 代理商： | MX29LV320AB |
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19
P/N:PM1008
REV. 1.1, MAY 28, 2004
MX29LV320AT/B
SECTOR ERASE COMMANDS
The device does not require the system to entirely
pre-program prior to executing the Automatic Set-up
Sector Erase command and Automatic Sector Erase
command. Upon executing the Automatic Sector
Erase command, the device will automatically
program and verify the sector(s) memory for an all-
zero data pattern. The system is not required to
provide any control or timing during these operations.
When the sector(s) is automatically verified to
contain an all-zero pattern, a self-timed sector erase
and verify begin. The erase and verify operations are
complete when the data on Q7 is "1" and the data on
Q6 stops toggling for two consecutive read cycles, at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
When using the Automatic Sector Erase algorithm,
note that the erase automatically terminates when
adequate erase margin has been achieved for the
memory array (no erase verification command is
required). Sector erase is a six-bus cycle operation.
There are two "unlock" write cycles. These are
followed by writing the set-up command 80H. Two
more "unlock" write cycles are then followed by the
sector erase command 30H. The sector address is
latched on the falling edge of WE or CE, whichever
happens later , while the command(data) is latched on
the rising edge of WE or CE, whichever happens first.
Sector addresses selected are loaded into internal
register on the sixth falling edge of WE or CE,
whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still
open, see section Q3, Sector Erase Timer.) Any
command other than Sector Erase(30H) or Erase
Suspend(B0H) during the time-out period resets the
device to read mode.
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend com-
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, When the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to re-
spond to the Erase Resume, program data to, or read
data from any sector not selected for erasure. The sys-
tem can use Q7, or Q6 and Q2 together, to determine if
a sector is actively erasing or is erase-suspended.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro-
gram operation is complete, the system can once again
read array data within non-suspended blocks.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
相關(guān)PDF資料 |
PDF描述 |
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| MX29LV320ABTC-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-70G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTC-90G | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV320ABTI-70 | 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV320CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:NOR Flash, 2M x 16, 40 Pin, Plastic, TSSOP |
| MX29LV320CBTI-90G | 制造商:MACRONIX 功能描述: |
| MX29LV320DBXEI-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 32 Mb (4 M x 8) 70 ns Parallel Flash-LFBGA-48 |
| MX29LV320DTTI-70G | 制造商:Macronix International Co Ltd 功能描述:2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MX29LV320EBTI-70G | 功能描述:IC FLASH PAR 3V 32MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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