參數(shù)資料
型號(hào): MX29F800TMI-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
中文描述: 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁(yè)數(shù): 7/42頁(yè)
文件大小: 693K
代理商: MX29F800TMI-12
7
P/N:PM0578
MX29F800T/B
REV. 1.7, JUL. 24, 2001
Pins
CE
OE
WE
A0
A1
A6
A9
Q0 ~ Q15
Mode
Read Silicon ID
Manfacturer Code(1)
Read Silicon ID
Device Code(1)
Read
Standby
Output Disable
Write
Sector Protect(6)
Chip Unprotect
Verify Sector Protect(6)
Reset
L
L
H
L
L
X
V
ID
(2)
C2H (Byte mode)
00C2H (Word mode)
D6H/58H (Byte mode)
22D6H/2258H (Word mode)
D
OUT
HIGH Z
HIGH Z
D
IN
(3)
X
X
Code(5)
HIGH Z
L
L
H
H
L
X
V
ID
(2)
L
H
L
L
L
L
L
X
L
X
H
H
V
ID
(2)
V
ID
(2)
L
X
H
X
H
L
L
L
H
X
A0
X
X
A0
X
X
X
X
A1
X
X
A1
X
X
H
X
A6
X
X
A6
L
H
X
X
A9
X
X
A9
V
ID
(2)
V
ID
(2)
V
ID
(2)
X
TABLE 2. MX29F800T/B BUS OPERATION
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 1 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H/0000H means unprotected.
Code=01H/0001H means protected.
6. A18~A12=Sector address for sector protect.
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while
the Sector Erase operation is in progress. Either of the
two reset command sequences will reset the
device(when applicable).
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 1 defines the valid register command
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