參數(shù)資料
型號: MX29F800TMI-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
中文描述: 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁數(shù): 15/42頁
文件大?。?/td> 693K
代理商: MX29F800TMI-12
15
P/N:PM0578
MX29F800T/B
REV. 1.7, JUL. 24, 2001
READ TIMING WAVEFORMS
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
DC CHARACTERISTICS
TA = -40
o
C TO 85
o
C, VCC = 5V
±
10% (TA = 0
o
C TO 70
o
C for MX29F800T/B-70)
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
30
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=1MHz
IOUT=0mA, F=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
2
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