參數(shù)資料
型號： MWI35-12T7T
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： 60 A, 1200 V, N-CHANNEL IGBT
封裝： SIXPACK-28
文件頁數(shù)： 2/7頁
文件大?。?/td> 202K
代理商： MWI35-12T7T
2008 IXYS All rights reserved
2 - 7
20081209c
MWI 35-12T7T
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
CES
collector emitter voltage
T
VJ = 25°C
1200
V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
I
C25
I
C80
collector current
T
C =
25°C
T
C =
80°C
60
40
A
P
tot
total power dissipation
T
C =
25°C
200
W
V
CE(sat)
collector emitter saturation voltage
I
C = 35 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.7
1.9
2.1
V
V
GE(th)
gate emitter threshold voltage
I
C = 1.5 mA; VGE = VCE
T
VJ =
25°C
5
5.8
6.5
V
I
CES
collector emitter leakage current
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.2
mA
I
GES
gate emitter leakage current
V
GE = ±20 V
500
nA
C
ies
input capacitance
V
CE = 25 V; VGE=0V;f=1MHz
2530
pF
Q
G(on)
total gate charge
V
CE = 600 V; VGE = 15 V; IC = 35 A
170
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ = 125°C
V
CE = 600 V; IC = 35 A
V
GE=±15V;RG = 27 W
L
S=70nH
90
30
360
340
3.1
3.8
ns
mJ
RBSOA
reverse bias safe operating area
V
GE=±15V;RG = 27 W
T
VJ = 125°C
V
CEK = 1200 V
70
A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE = 900 V; VGE = ±15 V;
T
VJ = 125°C
R
G = 27 W; non-repetitive
140
10
s
A
R
thJC
thermal resistance junction to case
(perIGBT)
0.62
K/W
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitve reverse voltage
T
VJ =
25°C
1200
V
I
F25
I
F80
forward current
T
C =
25°C
T
C =
80°C
44
29
A
V
F
forward voltage
I
F = 35 A; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
2.05
1.95
2.3
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R = 600 V
di
F /dt = -1500 A/s
T
VJ = 125°C
I
F = 35 A; VGE = 0 V
3.1
47
250
0.97
C
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode)
1.2
K/W
T
C=25°Cunlessotherwisestated
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