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參數(shù)資料
| 型號： | MWI450-17E9 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 540 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-29 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 289K |
| 代理商： | MWI450-17E9 |
2004 IXYS All rights reserved
1 - 3
416
Advanced Technical Information
MWI 450-17 E9
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 125°C
1700
V
V
GES
± 20
V
I
C25
T
C =
25°C
540
A
I
C60
T
C =
60°C
440
A
I
C80
T
C =
80°C
375
A
RBSOA
R
G = 3.3 ; TVJ = 125°C
I
CM =
750
A
Clamped inductive load; L = 100 H
V
CEK ≤ VCES
t
SC
V
CE = 1000 V; VGE = ±15 V; RG = 3.3 ;10
s
(SCSOA)
T
VJ = 125°C; non-repetitive; VCEmax < VCES
P
tot
T
C = 25°C
2.2
kW
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 450 A; VGE = 15 V; TVJ =
25°C
2.6
3.0
V
T
VJ = 125°C
3.0
3.6
V
V
GE(th)
I
C = 30 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
1 mA
T
VJ = 125°C
9
26 mA
I
GES
V
CE = 0 V; VGE = ± 20 V
1.5
A
t
d(on)
170
ns
t
r
110
ns
t
d(off)
480
ns
t
f
110
ns
E
on
150
mJ
E
off
90
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
33
nF
Q
Gon
V
CE = 900 V; VGE = 15 V; IC = 300 A
2.6
C
R
thJC
0.057 K/W
Inductive load, T
VJ = 125°C
V
CE = 900 V; IC = 450 A
V
GE = ±15 V; RG = 3.3
I
C60
= 440 A
V
CES = 1700 V
V
CE(sat) typ. = 2.5 V
IGBT Modules
Sixpack
Features
NPT3 IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
6
4
2
5
3
1
27
22
17
25
20
15
23
18
13
24
19
14
7/8
9/10
11/12
26
21
16
28
29
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MWI451-17E9 | 功能描述:IGBT 模塊 6-PK IGBT MODULE IN E9-PK 1700V 475A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MWI45-12T6K | 功能描述:分立半導體模塊 45 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI50-06A7 | 功能描述:分立半導體模塊 50 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI50-06A7T | 功能描述:IGBT 模塊 50 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MWI50-12A5 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT Modules Sixpack |
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