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參數(shù)資料
| 型號： | MTW32N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MTW32N25E |
MTW32N25E
http://onsemi.com
6
SAFE OPERATING AREA
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0
0.001
0.01
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1.0
100
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
1.0
100
t, TIME (s)
Figure 12. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 13. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100 s
1 ms
dc
0.2
0.02
0.1
D = 0.5
0.05
SINGLE PULSE
0.01
0.1
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10 ms
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 14. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
600
400
300
100
ID = 32 A
500
150
200
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