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參數(shù)資料
| 型號(hào)： | MTW32N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | MTW32N25E |
MTW32N25E
http://onsemi.com
5
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
0.5
0.6
0.7
0.8
0.9
1.0
0
8
16
24
32
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t,TIME
(ns)
VDD = 125 V
ID = 32 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
Figure 10. Diode Forward Voltage versus Current
300
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
250
200
150
100
50
0
10
6
2
0
QT, TOTAL CHARGE (nC)
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
20
40
60
80
100
ID = 32 A
TJ = 25°C
VDS
VGS
QT
Q1
Q2
Q3
0
10
30
50
70
90
0.55
0.65
0.75
0.85
0.95
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
Resistance–General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) – TC)/(R
θJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTW33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MTW45N10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
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