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參數(shù)資料
| 型號： | MTW32N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MTW32N25E |
MTW32N25E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
246
8
10
0
16
48
64
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
345
6
8
0
16
32
48
64
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
8
24
40
56
64
0.02
0.04
0.08
0.12
0.16
016
3248
64
0.064
0.072
0.084
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
-50
0.4
1.2
2.0
0
100
200
250
1
100
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
-25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
25°C
TJ = -55°C
TJ = 100°C
25°C
-55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 2.0 A
7 V
6 V
5 V
56
8
24
32
40
0.06
0.1
0.14
0.8
1.6
8
24
40
56
0.068
0.076
0.08
10
1000
1
357
9
7
100°C
16
32
48
8
24
40
56
50
150
TJ = 125°C
100°C
25°C
15 V
VGS = 10 V
8 V
9 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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