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參數(shù)資料
| 型號(hào)： | MTW32N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | MTW32N25E |
MTW32N25E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
250
–
300
380
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
7.0
4.0
–
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
RDS(on)
–
0.07
0.08
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 32 Adc)
(ID = 16 Adc, TJ = 125°C)
VDS(on)
–
2.2
–
2.6
2.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)
gFS
11
20
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
3800
5350
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
726
1020
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
–
183
370
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
31
60
ns
Rise Time
(VDD= 125 Vdc, ID = 32 Adc,
VGS =10Vdc
tr
–
133
266
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
93
186
Fall Time
RG 9.1 )
tf
–
108
216
Gate Charge
(S
Fi
8)
QT
–
97
136
nC
(See Figure 8)
(VDS = 200 Vdc, ID = 32 Adc,
Q1
–
22
–
(VDS 200 Vdc, ID 32 Adc,
VGS = 10 Vdc)
Q2
–
43
–
Q3
–
41
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
1.0
0.92
1.5
–
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
–
312
–
ns
(See Figure 14)
(IS =32Adc VGS = 0 Vdc
ta
–
220
–
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
93
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
3.6
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
13
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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