參數(shù)資料
型號: MTV32N20E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
中文描述: 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 264K
代理商: MTV32N20E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
2
4
6
8
10
0
20
60
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
0
2
4
6
10
0
10
30
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
8
16
24
32
64
0.02
0.06
0.08
0.10
0.16
R
0
8
16
24
32
64
0.05
0.06
0.07
0.08
0.10
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 16 A
1
3
5
7
9
40
80
9 V
8 V
6 V
5 V
7 V
8
20
40
50
0.04
0.12
0.14
40
48
56
0.09
40
48
56
VGS = 10 V
15 V
0
TJ = 125
°
C
100
°
C
25
°
C
相關PDF資料
PDF描述
MTW16N40E TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
MTW20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
MTW23N25E TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
MTW24N40E TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
MTW32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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