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參數(shù)資料
| 型號： | MTV32N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| 中文描述： | 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MTV32N20E |
1
Motorola, Inc. 1996
"
! !
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
speed switching applications in power supplies, converters, PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
PD
200
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
200
Vdc
±
20
32
19
128
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Adc
Apk
180
1.44
2.0
Watts
W/
°
C
Watts
TJ, Tstg
EAS
–55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 1.58 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
810
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.7
62.5
35
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
260
°
C
Order this document
by MTV32N20E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 433–01, Style 2
D3PAK Surface Mount
TMOS POWER FET
32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM
D
S
G
N–Channel
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| MTW16N40E | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM |
| MTW32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
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