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參數(shù)資料
| 型號(hào)： | MTW20N50E |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| 中文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MTW20N50E |
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
500
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
20
14.1
60
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
250
2.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25
)
2000
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.50
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Order this document
by MTW20N50E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
20 AMPERES
500 VOLTS
RDS(on) = 0.24 OHM
Motorola Preferred Device
D
S
G
CASE 340K–01, Style 1
TO–247AE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM |
| MTW32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| MTW32N25 | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW23N25E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW26N15E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
| MTW2805S | 制造商:INTERPOINT 制造商全稱(chēng):INTERPOINT 功能描述:–55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection |
| MTW2805S/ES | 制造商:INTERPOINT 制造商全稱(chēng):INTERPOINT 功能描述:DC/DC CONVERTERS 28 VOLT INPUT |
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