- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTV32N20E (MOTOROLA INC) TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM PDF資料下載
參數(shù)資料
| 型號： | MTV32N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| 中文描述： | 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MTV32N20E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
—
—
247
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
250
1000
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
8.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.064
0.075
Ohm
—
—
2.1
—
3.0
2.7
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)
gFS
12
20
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
3600
5000
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
130
250
Transfer Capacitance
—
690
1000
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 6.2
)
td(on)
tr
td(off)
tf
—
25
50
ns
Rise Time
(VDD = 100 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
—
120
240
Turn–Off Delay Time
—
75
150
Fall Time
—
91
182
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
85
120
nC
(VDS = 160 Vdc, ID = 32 Adc,
—
12
—
—
40
—
—
30
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.1
0.9
2.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
280
—
ns
(IS = 32 Adc, VGS = 0 Vdc,
—
195
—
tb
—
85
—
Reverse Recovery Stored Charge
QRR
—
2.94
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTW16N40E | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM |
| MTW32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTV32N25E | 制造商:ON Semiconductor 功能描述: |
| MTV330TR | 制造商:Analog Devices 功能描述: |
| MTV401TR | 制造商:Analog Devices 功能描述: |
| MTV412M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8051 Embedded Monitor Controller 128K Flash Type with ISP |
| MTV412MF128 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8051 Embedded Monitor Controller 128K Flash Type with ISP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。