參數(shù)資料
型號: MTU18N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 18 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/8頁
文件大?。?/td> 160K
代理商: MTU18N50E
MTU18N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
0
1
2
3
4
567
89
10
5
20
15
25
35
0
VGS = 10 V
TJ = 25°C
2.5
3
3.5
4
4.5
6
5
10
20
15
25
0
5
10
15
20
25
30
35
0.2
0.1
0.4
0.3
0.6
0.5
0.8
0
VGS = 10 V
TJ = 100°C
4
6
8
1012
14
16
1820
0.25
0.30
0.20
VGS = 10 V
TJ = 25°C
0.35
0.40
–50
–25
0
25
50
75
100
125
150
0.5
1.0
2.0
2.5
0
VGS = 10 V
ID = 9 A
0
100
200
300
400
500
1000
10,000
10
VGS = 0 V
4.5 V
8 V
5 V
VDS ≥ 10 V
100
°C
25
°C
TJ = –55°C
25
°C
–55
°C
15 V
100
°C
TJ = 125°C
4 V
5
5.5
0.7
1.5
30
6 V
100
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