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參數(shù)資料
| 型號(hào)： | MTSF3N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO-8 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | MTSF3N03HDR2 |
MTSF3N03HD
http://onsemi.com
6
Figure 10. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 11. Resistive Switching Time
Variation versus Gate Resistance
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
03
6
5
9
ID = 3.7 A
TJ = 25°C
VGS
8
2
0
12
10
30
25
15
10
0
VDS
QT
Q1
Q2
Q3
12
15
V DS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1
100
10
1
VDD = 15 V
ID = 3.7 A
VGS = 10 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
6
4
20
18
21
1000
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 13. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
0.5
0.6
0.7
0
1
2
3
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 12. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
0.8
0.9
4
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| MTSF3N03HDR2G | 功能描述:MOSFET NFET 30V 3A 40MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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