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參數(shù)資料
| 型號(hào)： | MTSF3N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MTSF3N03HDR2 |
MTSF3N03HD
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
30
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
V
Gate–to–Source Voltage – Continuous
VGS
± 20
V
1
″ SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
70
1.79
14.29
5.7
4.5
45
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
160
0.78
6.25
3.8
3.0
30
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 W)
EAS
200
mJ
1. Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1
, Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
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