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參數(shù)資料
| 型號： | MTSF3N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 138K |
| 代理商： | MTSF3N03HDR2 |
MTSF3N03HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.5
2
0
1
3
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.4
0.5
0.6
0.03
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
0.3
4
2
0.1
TJ = 25°C
2
4
6
5
1
2
2.5
3
3.5
4
0.2
0.06
01
2
5
6
10
0
5
10
15
30
2.3 V
20
25
0
0.04
0.05
3
24
8
6
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
34
10 V
VGS = 4.5
TJ = 25°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.9 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
100°C
1
5
6
2.1 V
2.5 V
2.7 V
2.9 V
3.1 V
4.5 V
VGS = 10 V
ID = 3.8 A
TJ = 25°C
3.3 V
1.5
1
0
0.035
0.045
0.055
1000
0.1
25°C
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