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參數(shù)資料
| 型號： | MTSF3N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MTSF3N03HDR2 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MTSF3N03HD/D
MTSF3N03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
N–Channel Micro8
t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package – Saves Board Space
Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
1
8
Device
Package
Shipping
ORDERING INFORMATION
MTSF3N03HDR2
Micro8
4000 Tape & Reel
Micro8
CASE 846A
STYLE 1
http://onsemi.com
AA
MARKING
DIAGRAM
WW
= Date Code
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
N–Channel
3 AMPERES
30 VOLTS
RDS(on) = 40 mW
D
S
G
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