參數(shù)資料
型號(hào)： MTSF3N02HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICROPAK-8
文件頁數(shù)： 5/12頁
文件大?。?/td> 137K
代理商： MTSF3N02HDR2
MTSF3N02HD
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
V
Gate–to–Source Voltage – Continuous
VGS
± 8.0
V
1
″ SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
70
1.79
14.29
6.1
4.9
49
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
160
0.78
6.25
4.0
3.2
32
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
1. Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1
, Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
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