參數(shù)資料
型號： MTP20N15E
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power MOSFET 20 Amps, 150 Volts N-Channel TO-220
中文描述： 20 A, 150 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 49K
代理商： MTP20N15E
MTP20N15E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
–
–
TBD
–
–
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
10
100
μ
Adc
IGSS(f)
IGSS(r)
–
–
–
–
100
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
–
TBD
4.0
–
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
–
0.12
0.13
Ohm
–
–
–
–
2.8
2.6
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)
gFS
8.0
11
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
–
1133
1627
pF
Output Capacitance
Coss
Crss
–
332
474
Transfer Capacitance
–
105
174
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
–
11
25
ns
Rise Time
(VDD = 75 Vdc, ID = 20 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
RG 9.1
)
–
77
153
Turn–Off Delay Time
–
33
67
Fall Time
–
49
97
Gate Charge
–
39.1
55.9
nC
(VDS = 120 Vdc, ID = 20 Adc,
(VDS 120 Vdc, ID 20 Adc,
VGS = 10 Vdc)
–
7.5
–
–
22
–
–
17
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
–
–
–
–
1.5
–
Vdc
Reverse Recovery Time
trr
ta
tb
–
160
–
ns
(IS = 20 Adc VGS
dIS/dt = 100 A/
μ
s)
0 Vdc
–
123
–
–
36.5
–
Reverse Recovery Stored
Charge
QRR
–
1.1
–
μ
C
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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