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參數(shù)資料
| 型號： | MTP20N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MTP20N06V |
MTP20N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
02
4
6
8
10
0
10
20
30
35
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
9
23
4
8
0
10
20
30
35
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
010
20
30
40
5
0
0.02
0.04
0.06
0.12
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
203040
0
50
10
35
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100°C
TJ = 25°C
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
TJ = 100°C
25°C
-55°C
VGS = 0 V
VGS = 10V
VGS = 10 V
40
5
7 V
6 V
5 V
4 V
8 V
9 V
40
5
56
7
0.08
0.1
35
60
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
010
20
30
40
35
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
15 V
TJ = 25°C
VGS = 10 V
0.06
0.07
5
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
-50
0
0.25
0.5
0.75
2.0
TJ, JUNCTION TEMPERATURE (°C)
-25
0
25
50
75
100
150
VGS = 10 V
ID = 10 A
1
1.25
1.5
1.75
125
175
13
57
9
15
25
15
25
0.14
0.16
0.18
15
25
0.09
0.1
0.11
15
25
5
15
20
25
30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP20N08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 20 A, 60-100 V |
| MTP20N10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 20 A, 60-100 V |
| MTP20N15E | 功能描述:MOSFET 150V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP20N15EG | 功能描述:MOSFET NFET T0220 150V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP20N20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM |
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