參數(shù)資料
型號(hào)： MTP2955VS62Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： 37, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 348K
代理商： MTP2955VS62Z
MTP2955V
MTP2955V Rev. A
MTP2955V*
P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel MOSFET has been designed specifically
for low voltage, high speed switching applications i.e.
power supplies and power motor controls.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
May 1999
Features
-12 A, -60 V. R
DS(ON) = 0.230 @ VGS = -10 V
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
1999 Fairchild Semiconductor Corporation
$EVROXWH0D[LPXP5DWLQJV U
&2!$8yrurvrrq
6\PERO
3DUDPHWHU
5DWLQJV
8QLWV
W'66
9hvTprWyhtr
%
W
W*66
BhrTprWyhtr
±!
W
D'
9hv8r 8v
!
6
Qyrq
#!
UhyQr9vvhv5U&2!$°8%
X
Q'
9rhrhir!$°8
#
X°8
U-U67*
PrhvthqThtrEpvUrrhrShtr
%$ &$
°8
7KHUPDO&KDUDFWHULVWLFV
Sθ-&
UurhySrvhprEpv8hr
!$
°8X
Sθ-$
UurhySrvhprEpv6ivr
Ir
%!$
°8X
3DFNDJH2XWOLQHVDQG2UGHULQJ,QIRUPDWLRQ
'HYLFH0DUNLQJ
'HYLFH
3DFNDJH,QIRUPDWLRQ
4XDQWLW\
HUQ!($$W
ShvyUir
#$v