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| 型號： | MTP20N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MTP20N06V |
MTP20N06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (Note 3.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
69
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 3.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
2.8
5.0
4.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (Note 3.)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
–
0.065
0.080
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
–
2.0
1.9
Vdc
Forward Transconductance (VDS = 6.0 Vdc, ID = 10 Adc)
gFS
6.0
8.0
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
590
830
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
180
250
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
–
40
80
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
8.7
20
ns
Rise Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
–
77
150
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
26
50
Fall Time
RG 9.1 )
tf
–
46
90
Gate Charge
QT
–
28
40
nC
(VDS = 48 Vdc, ID = 20 Adc,
Q1
–
4.0
–
(VDS 48 Vdc, ID 20 Adc,
VGS = 10 Vdc)
Q2
–
9.0
–
Q3
–
8.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
–
1.05
0.96
1.6
–
Vdc
Reverse Recovery Time
trr
–
60
–
ns
(IS 20 Adc VGS 0 Vdc
ta
–
52
–
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
8.0
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
0.172
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
3.5
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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