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參數(shù)資料
| 型號(hào)： | MTP20N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | MTP20N06V |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 3
1
Publication Order Number:
MTP20N06V/D
MTP20N06V
Preferred Device
Power MOSFET
20 Amps, 60 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
20
13
70
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
60
0.40
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 20 Apk, L = 1.0 mH, RG = 25 )
EAS
200
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
R
θJC
R
θJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
20 AMPERES
60 VOLTS
RDS(on) = 80 m
Device
Package
Shipping
ORDERING INFORMATION
MTP20N06V
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP20N06V
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP20N06V
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP20N08 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 20 A, 60-100 V |
| MTP20N10 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 20 A, 60-100 V |
| MTP20N15E | 功能描述:MOSFET 150V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP20N15EG | 功能描述:MOSFET NFET T0220 150V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP20N20 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM |
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