- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96096 > MTP1N60E (ON SEMICONDUCTOR) 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MTP1N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MTP1N60E |
MTP1N60
MTP1N60E
http://onsemi.com
5
DRAINTOSOURCE DIODE CHARACTERISTICS
0.5
0.58
0.66
0.74
0.82
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
100
t,TIME
(ns)
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
600
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
500
400
300
200
0
10
8
0
QT, TOTAL CHARGE (nC)
VDS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
12
6
1
ID = 1 A
TJ = 25°C
4
2
3
45
67
8
100
0
VDD = 300 V
ID = 1 A
VGS = 10 V
TJ = 25°C
10
1
10
100
1
0.6
0.4
0.2
0
0.54
0.62
0.7
Q1
Q2
QT
VGS
VDS
Q3
0.8
0.78
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP20N06V | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP20N10E | 20 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP25N05E | 25 A, 50 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP25N10 | 25 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2955VG | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| MTP1S-E10-C | 功能描述:電纜束帶 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
| MTP1S-E10-C39 | 功能描述:電纜束帶 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
| MTP1S-E6-C | 功能描述:電纜束帶 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
| MTP200 | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 200A |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。