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參數(shù)資料
| 型號： | MTP1N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 116K |
| 代理商： | MTP1N60E |
MTP1N60
MTP1N60E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
2
468
20
0
0.4
1
1.8
2
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
2.8
3.6
4.4
5.2
6.8
0
0.4
1.2
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.4
0.8
1.2
1.6
2
0
4
8
12
16
0
0.4
0.8
1.2
1.6
2
5
6
7
8
9
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
0.4
0.8
1.6
2.4
1
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
TJ = 100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.5 A
10
12
14
16
18
5 V
1.6
0.8
2.4
3.2
4
4.8
5.6
2
6
10
14
1.8
1.4
1
0.6
0.2
25°C
55°C
VGS = 10 V
15 V
50
25
0
25
50
75
100
125
150
0
100
200
600
300
400
TJ = 125°C
100°C
25°C
0.2
0.6
1
1.4
1.8
6 V
1.6
1.4
1.2
0.8
0.6
0.2
6
6.4
8.5
7.5
6.5
5.5
2
1.2
500
100°C
7 V
4 V
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