參數(shù)資料
型號(hào): MTP16N25E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-06, 3 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 110K
代理商: MTP16N25E
MTP16N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0E05
1.0E04
1.0E02
0.1
1.0
0.01
1.0E03
1.0E01
1.0E+00
1.0E+01
0.05
0.01
SINGLE PULSE
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1.0
100
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
400
200
100
ID = 16 A
300
10
1.0
100
150
t,TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10 ms
1 ms
dc
100 s
10 s
0.1
D = 0.5
0.2
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