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參數(shù)資料
| 型號： | MTP16N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 110K |
| 代理商： | MTP16N25E |
MTP16N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
25°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 8 A
7 V
8 V
6 V
5 V
15 V
100°C
25°C
TJ = 100°C
55°C
32
24
16
8
0
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
32
24
16
8
0
32
24
16
8
0
0.26
40
0.22
0.18
0.14
0.1
0.6
0.5
0.4
0
20
15
10
5
035
30
25
0.3
0.2
0.1
TJ = 125°C
100
50
0
1000
100
10
1
150
200
250
300
050
50
1.0
0.5
0
150
100
125
25
75
2.0
1.5
3.0
2.5
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