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參數(shù)資料
| 型號： | MTP15N06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 163K |
| 代理商： | MTP15N06V |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
0
1
2
3
5
7
0
10
20
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
10
0
5
10
20
30
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
5
10
15
20
30
0.02
0.08
0.14
0.20
R
0
5
15
20
25
30
0.05
0.07
0.09
0.11
0.13
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
40
50
60
10
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
25
°
C
TJ = 25
°
C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125
°
C
5
15
25
4
6
15
25
25
10
30
VDS
≥
10 V
TJ = 100
°
C
– 55
°
C
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 7.5 A
2
1.6
1.2
0.8
0.4
–50
–25
0
25
50
75
100
125
150
175
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PDF描述 |
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| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
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| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP15N06VL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM |
| MTP15N08EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTP15N15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP162M3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:30V P-CHANNEL Enhancement Mode MOSFET |
| MTP16N25E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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