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參數(shù)資料
| 型號(hào)： | MTP1302 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm |
| 中文描述： | 40 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 166K |
| 代理商： | MTP1302 |
6
Motorola TMOS Power MOSFET Transistor Device Data
I
t, TIME
Figure 11. Reverse Recovery Time (trr)
Standard Cell Density
trr
High Cell Density
trr
tb
ta
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10
μ
s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
A
I
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
25
75
150
220
100
0
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
100
10
10
0.1
1.0
1000
,
A
50
100
125
ID = 42 A
120
20
10 ms
dc
1.0 ms
100 s
VGS = 10 V
SINGLE PULSE
TC = 25
°
C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100
10 s
40
60
80
200
160
180
140
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP1306 | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM |
| MTP15N06V | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| MTW16N40E | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP1306 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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| MTP14N05L | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-Channel Enhancement MOSFET |
| MTP150 | 制造商:NELLSEMI 制造商全稱(chēng):Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 150A |
| MTP156K00691D | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Wet Tantalum Capacitors Subminiature, Axial Leads |
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